一、igbt工作原理是什么
IGBT是絕(jue)緣柵(zha)(zha)(zha)雙極(ji)(ji)晶(jing)體(ti)(ti)管(guan)(guan)(guan)的(de)(de)英文簡稱(cheng),是一種(zhong)(zhong)三端(duan)半導(dao)體(ti)(ti)開(kai)關(guan)的(de)(de)器(qi)件,一般igbt結構相(xiang)當(dang)于一個(ge)四(si)層半導(dao)體(ti)(ti)的(de)(de)器(qi)件,四(si)層器(qi)件通(tong)(tong)過(guo)組合PNP和(he)NPN晶(jing)體(ti)(ti)管(guan)(guan)(guan)構成(cheng)了P-N-P-N排列;igbt模塊(kuai)則由散熱基(ji)(ji)板(ban)、DBC基(ji)(ji)板(ban)、IGBT芯片、Diode芯片以及鍵合線組成(cheng)。IGBT作(zuo)為(wei)一種(zhong)(zhong)功率晶(jing)體(ti)(ti)管(guan)(guan)(guan),主要用于變(bian)頻器(qi)逆變(bian)和(he)其他(ta)逆變(bian)電(dian)(dian)路,將直流電(dian)(dian)壓(ya)逆變(bian)成(cheng)頻率可(ke)調的(de)(de)交(jiao)流電(dian)(dian),其工作(zuo)原(yuan)理是通(tong)(tong)過(guo)不(bu)斷(duan)激活和(he)停用其柵(zha)(zha)(zha)極(ji)(ji)端(duan)子來(lai)開(kai)啟、關(guan)閉:IGBT的(de)(de)開(kai)關(guan)作(zuo)用是通(tong)(tong)過(guo)加正向柵(zha)(zha)(zha)極(ji)(ji)電(dian)(dian)壓(ya)形成(cheng)溝道,給PNP晶(jing)體(ti)(ti)管(guan)(guan)(guan)提供基(ji)(ji)極(ji)(ji)電(dian)(dian)流,使IGBT導(dao)通(tong)(tong)。反(fan)之(zhi),加反(fan)向門極(ji)(ji)電(dian)(dian)壓(ya)消(xiao)除(chu)溝道,切(qie)(qie)斷(duan)基(ji)(ji)極(ji)(ji)電(dian)(dian),使IGBT關(guan)斷(duan)。若(ruo)在IGBT的(de)(de)柵(zha)(zha)(zha)極(ji)(ji)和(he)發(fa)射極(ji)(ji)之(zhi)間加上驅(qu)動正電(dian)(dian)壓(ya),則MOSFET導(dao)通(tong)(tong),這樣(yang)PNP晶(jing)體(ti)(ti)管(guan)(guan)(guan)的(de)(de)集電(dian)(dian)極(ji)(ji)與基(ji)(ji)極(ji)(ji)之(zhi)間成(cheng)低阻(zu)狀態而使得(de)晶(jing)體(ti)(ti)管(guan)(guan)(guan)導(dao)通(tong)(tong);若(ruo)IGBT的(de)(de)柵(zha)(zha)(zha)極(ji)(ji)和(he)發(fa)射極(ji)(ji)之(zhi)間電(dian)(dian)壓(ya)為(wei)0V,則MOSFET截(jie)止(zhi),切(qie)(qie)斷(duan)PNP晶(jing)體(ti)(ti)管(guan)(guan)(guan)基(ji)(ji)極(ji)(ji)電(dian)(dian)流的(de)(de)供給,使得(de)晶(jing)體(ti)(ti)管(guan)(guan)(guan)截(jie)止(zhi)。
二、igbt的作用和功能
IGBT的主要作用是可以很容易地將輸入的高壓直流電流轉換為高壓交流電,只需通過脈寬調制即可實現變頻控制,它通過十幾伏的門極控制信號,即可實現kV級電壓和kA級電流的控制,開關頻率可達每秒幾萬次,具有高電壓、大電流、高頻率、低導通壓降等特點,廣泛應用于新能源汽車的電動控制系統、車載空調控制系統以及充電樁領域,智能電網的發電端、輸電端、變電端、用電端,軌道交通的交流傳動系統等領域。如果您需要采購igbt芯片或igbt模塊,可以先來看看IGBT十大品牌。
三、igbt芯片和igbt模塊的區別
IGBT芯(xin)(xin)(xin)(xin)片(pian)(pian)是(shi)(shi)(shi)(shi)絕緣柵(zha)雙極型晶(jing)體(ti)管芯(xin)(xin)(xin)(xin)片(pian)(pian),是(shi)(shi)(shi)(shi)一(yi)(yi)種復(fu)合全控型電(dian)(dian)壓(ya)驅(qu)(qu)動式功率半導體(ti)器件,被稱為(wei)(wei)“電(dian)(dian)力電(dian)(dian)子裝(zhuang)(zhuang)置(zhi)的(de)CPU”,它(ta)和(he)igbt模塊(kuai)統稱igbt,不過igbt芯(xin)(xin)(xin)(xin)片(pian)(pian)和(he)igbt模塊(kuai)還是(shi)(shi)(shi)(shi)有(you)(you)所(suo)不同的(de),簡單來說,IGBT芯(xin)(xin)(xin)(xin)片(pian)(pian)就是(shi)(shi)(shi)(shi)一(yi)(yi)塊(kuai)封裝(zhuang)(zhuang)好(hao)的(de)絕緣柵(zha)雙極型晶(jing)體(ti)管芯(xin)(xin)(xin)(xin)片(pian)(pian),而igbt模塊(kuai)是(shi)(shi)(shi)(shi)由多(duo)個(ge)IGBT芯(xin)(xin)(xin)(xin)片(pian)(pian)、反并聯(lian)二極管、驅(qu)(qu)動電(dian)(dian)路(lu)、保(bao)護(hu)電(dian)(dian)路(lu)等(deng)(deng)組成(cheng)(cheng)的(de)集成(cheng)(cheng)模塊(kuai)。一(yi)(yi)般(ban)(ban)來說,IGBT芯(xin)(xin)(xin)(xin)片(pian)(pian)不會單獨使用(yong),而是(shi)(shi)(shi)(shi)組裝(zhuang)(zhuang)成(cheng)(cheng)igbt模塊(kuai)再使用(yong),因(yin)為(wei)(wei)IGBT模塊(kuai)具(ju)有(you)(you)節能、安裝(zhuang)(zhuang)維修方便(bian)、散熱穩定等(deng)(deng)特(te)點(dian),當前(qian)市(shi)場上銷售的(de)多(duo)為(wei)(wei)模塊(kuai)化(hua)產品,一(yi)(yi)般(ban)(ban)所(suo)說的(de)IGBT也(ye)指IGBT模塊(kuai)。
四、igbt模塊怎么測量好壞
igbt模塊損(sun)壞(huai)(huai)一(yi)(yi)般常見的(de)(de)(de)(de)(de)原因(yin)有過電(dian)流(liu)損(sun)壞(huai)(huai)、過電(dian)壓損(sun)壞(huai)(huai)、靜電(dian)損(sun)壞(huai)(huai)、過熱(re)損(sun)壞(huai)(huai)、機械應力對產品的(de)(de)(de)(de)(de)破壞(huai)(huai)等,判(pan)(pan)(pan)斷(duan)IGBT模塊是否損(sun)壞(huai)(huai),一(yi)(yi)般需要(yao)先對其(qi)進行檢測(ce),igbt模塊的(de)(de)(de)(de)(de)檢測(ce)一(yi)(yi)般分為兩(liang)部分:1、判(pan)(pan)(pan)斷(duan)極(ji)(ji)性:首先將萬(wan)(wan)用(yong)(yong)(yong)表(biao)撥在R×1KΩ擋(dang),用(yong)(yong)(yong)萬(wan)(wan)用(yong)(yong)(yong)表(biao)測(ce)量(liang)(liang)(liang)時,若某一(yi)(yi)極(ji)(ji)與其(qi)它兩(liang)極(ji)(ji)阻(zu)值(zhi)(zhi)(zhi)為無窮大,調換(huan)表(biao)筆(bi)后(hou)該(gai)極(ji)(ji)與其(qi)它兩(liang)極(ji)(ji)的(de)(de)(de)(de)(de)阻(zu)值(zhi)(zhi)(zhi)仍為無窮大,則判(pan)(pan)(pan)斷(duan)此(ci)(ci)(ci)極(ji)(ji)為柵(zha)極(ji)(ji)(G),其(qi)余兩(liang)極(ji)(ji)再(zai)用(yong)(yong)(yong)萬(wan)(wan)用(yong)(yong)(yong)表(biao)測(ce)量(liang)(liang)(liang),若測(ce)得阻(zu)值(zhi)(zhi)(zhi)為無窮大,調換(huan)表(biao)筆(bi)后(hou)測(ce)量(liang)(liang)(liang)阻(zu)值(zhi)(zhi)(zhi)較小(xiao)。在測(ce)量(liang)(liang)(liang)阻(zu)值(zhi)(zhi)(zhi)較小(xiao)的(de)(de)(de)(de)(de)一(yi)(yi)次中(zhong),則判(pan)(pan)(pan)斷(duan)紅(hong)表(biao)筆(bi)接(jie)的(de)(de)(de)(de)(de)為集電(dian)極(ji)(ji)(C);黑(hei)表(biao)筆(bi)接(jie)地為發(fa)射極(ji)(ji)(E)。2、判(pan)(pan)(pan)斷(duan)好壞(huai)(huai):將萬(wan)(wan)用(yong)(yong)(yong)表(biao)撥在R×10KΩ擋(dang),用(yong)(yong)(yong)黑(hei)表(biao)筆(bi)接(jie)IGBT的(de)(de)(de)(de)(de)集電(dian)極(ji)(ji)(C),紅(hong)表(biao)筆(bi)接(jie)IGBT 的(de)(de)(de)(de)(de)發(fa)射極(ji)(ji)(E),此(ci)(ci)(ci)時萬(wan)(wan)用(yong)(yong)(yong)表(biao)的(de)(de)(de)(de)(de)指針(zhen)在零位(wei)。用(yong)(yong)(yong)手指同時觸及一(yi)(yi)下柵(zha)極(ji)(ji)(G)和集電(dian)極(ji)(ji)(C),這時IGBT被觸發(fa)導通,萬(wan)(wan)用(yong)(yong)(yong)表(biao)的(de)(de)(de)(de)(de)指針(zhen)擺向(xiang)(xiang)阻(zu)值(zhi)(zhi)(zhi)較小(xiao)的(de)(de)(de)(de)(de)方向(xiang)(xiang),并能(neng)站住指示在某一(yi)(yi)位(wei)置。然后(hou)再(zai)用(yong)(yong)(yong)手指同時觸及一(yi)(yi)下柵(zha)極(ji)(ji)(G)和發(fa)射極(ji)(ji)(E),這時IGBT被阻(zu)斷(duan),萬(wan)(wan)用(yong)(yong)(yong)表(biao)的(de)(de)(de)(de)(de)指針(zhen)回(hui)零。此(ci)(ci)(ci)時即(ji)可判(pan)(pan)(pan)斷(duan)IGBT是好的(de)(de)(de)(de)(de)。