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光(guang)(guang)伏(fu)發(fa)電是利用(yong)半(ban)導(dao)體界面的光(guang)(guang)生伏(fu)特效應(ying)而將(jiang)光(guang)(guang)能直接轉變為(wei)電能的一種技術(shu)。主要由(you)太陽電池(chi)板（組件(jian)）、控(kong)制器(qi)和逆(ni)變器(qi)三(san)大部(bu)分組成(cheng)，主要部(bu)件(jian)由(you)電子(zi)元器(qi)件(jian)構(gou)成(cheng)。太陽能電池(chi)經(jing)過串聯(lian)后(hou)進行封裝保(bao)護可形成(cheng)大面積的太陽電池(chi)組件(jian)，再配合(he)上功率控(kong)制器(qi)等(deng)部(bu)件(jian)就(jiu)形成(cheng)了光(guang)(guang)伏(fu)發(fa)電裝置。

光(guang)伏發(fa)電(dian)(dian)(dian)(dian)的(de)主要原(yuan)(yuan)理是半導(dao)體的(de)光(guang)電(dian)(dian)(dian)(dian)效(xiao)應。光(guang)子(zi)(zi)(zi)照(zhao)(zhao)射到(dao)金屬(shu)上時，它的(de)能量可以被金屬(shu)中(zhong)某個(ge)(ge)電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)全部吸收(shou)(shou)，電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)吸收(shou)(shou)的(de)能量足夠大，能克服金屬(shu)內部引力做功，離開金屬(shu)表面(mian)逃逸出來，成為(wei)光(guang)電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)。硅(gui)原(yuan)(yuan)子(zi)(zi)(zi)有4個(ge)(ge)外層電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)，如(ru)果在純(chun)硅(gui)中(zhong)摻入有5個(ge)(ge)外層電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)的(de)原(yuan)(yuan)子(zi)(zi)(zi)如(ru)磷原(yuan)(yuan)子(zi)(zi)(zi)，就成為(wei)N型半導(dao)體；若在純(chun)硅(gui)中(zhong)摻入有3個(ge)(ge)外層電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)的(de)原(yuan)(yuan)子(zi)(zi)(zi)如(ru)硼原(yuan)(yuan)子(zi)(zi)(zi)，形(xing)成P型半導(dao)體。當P型和N型結(jie)合在一起(qi)時，接觸面(mian)就會形(xing)成電(dian)(dian)(dian)(dian)勢差，成為(wei)太(tai)陽能電(dian)(dian)(dian)(dian)池。當太(tai)陽光(guang)照(zhao)(zhao)射到(dao)P-N結(jie)后(hou)，空穴由P極(ji)區(qu)往N極(ji)區(qu)移動，電(dian)(dian)(dian)(dian)子(zi)(zi)(zi)由N極(ji)區(qu)向P極(ji)區(qu)移動，形(xing)成電(dian)(dian)(dian)(dian)流(liu)。

光電(dian)(dian)效應就是(shi)光照(zhao)使(shi)不均勻半導體或半導體與(yu)金屬(shu)結合(he)的(de)(de)不同部位(wei)之間產生(sheng)電(dian)(dian)位(wei)差的(de)(de)現(xian)象。它(ta)首先(xian)是(shi)由光子(zi)(光波)轉化為(wei)電(dian)(dian)子(zi)、光能(neng)(neng)量轉化為(wei)電(dian)(dian)能(neng)(neng)量的(de)(de)過程；其次，是(shi)形(xing)成電(dian)(dian)壓過程。

多晶硅(gui)(gui)經(jing)過鑄錠、破錠、切(qie)片等程序后(hou)(hou)，制作成(cheng)(cheng)(cheng)待(dai)加工(gong)的硅(gui)(gui)片。在(zai)硅(gui)(gui)片上摻雜(za)和擴散(san)微量的硼(peng)、磷等，就形成(cheng)(cheng)(cheng)P－N結(jie)。然后(hou)(hou)采用絲網(wang)印刷，將精(jing)配好的銀漿印在(zai)硅(gui)(gui)片上做成(cheng)(cheng)(cheng)柵線，經(jing)過燒結(jie)，同(tong)時(shi)制成(cheng)(cheng)(cheng)背電(dian)(dian)極(ji)，并在(zai)有柵線的面(mian)涂一(yi)層(ceng)防(fang)反(fan)射涂層(ceng)，電(dian)(dian)池(chi)(chi)(chi)片就至此制成(cheng)(cheng)(cheng)。電(dian)(dian)池(chi)(chi)(chi)片排列組合成(cheng)(cheng)(cheng)電(dian)(dian)池(chi)(chi)(chi)組件(jian)，就組成(cheng)(cheng)(cheng)了(le)大的電(dian)(dian)路板(ban)。一(yi)般在(zai)組件(jian)四周包鋁(lv)框，正面(mian)覆蓋玻璃(li)，反(fan)面(mian)安(an)裝(zhuang)電(dian)(dian)極(ji)。有了(le)電(dian)(dian)池(chi)(chi)(chi)組件(jian)和其他(ta)輔助(zhu)設備，就可(ke)(ke)以(yi)組成(cheng)(cheng)(cheng)發(fa)電(dian)(dian)系統(tong)。為了(le)將直流(liu)電(dian)(dian)轉化交流(liu)電(dian)(dian)，需要(yao)安(an)裝(zhuang)電(dian)(dian)流(liu)轉換器。發(fa)電(dian)(dian)后(hou)(hou)可(ke)(ke)用蓄電(dian)(dian)池(chi)(chi)(chi)存儲，也可(ke)(ke)輸入公共(gong)電(dian)(dian)網(wang)。發(fa)電(dian)(dian)系統(tong)成(cheng)(cheng)(cheng)本中，電(dian)(dian)池(chi)(chi)(chi)組件(jian)約占50%，電(dian)(dian)流(liu)轉換器、安(an)裝(zhuang)費(fei)、其他(ta)輔助(zhu)部件(jian)以(yi)及(ji)其他(ta)費(fei)用占另外50%。

無(wu)論從世(shi)界還(huan)是從中國(guo)來看，常規能(neng)源都是很有(you)限(xian)的(de)(de)。中國(guo)的(de)(de)一次能(neng)源儲(chu)量(liang)(liang)遠遠低于世(shi)界的(de)(de)平均(jun)水平，大約(yue)只(zhi)有(you)世(shi)界總儲(chu)量(liang)(liang)的(de)(de)10%。太(tai)陽能(neng)是人類取之(zhi)不盡用之(zhi)不竭的(de)(de)可再生能(neng)源，具(ju)有(you)充分的(de)(de)清潔性(xing)、絕對(dui)(dui)的(de)(de)安全(quan)性(xing)、相對(dui)(dui)的(de)(de)廣(guang)泛性(xing)、確(que)實的(de)(de)長壽(shou)命和(he)免維(wei)護性(xing)、資源的(de)(de)充足性(xing)及潛在(zai)的(de)(de)經濟性(xing)等(deng)優點，在(zai)能(neng)源戰略中具(ju)有(you)重要地位(wei)。