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光(guang)伏(fu)發電(dian)是(shi)利(li)用半導體界(jie)面的光(guang)生(sheng)伏(fu)特效應而(er)將光(guang)能(neng)直(zhi)接轉變為電(dian)能(neng)的一種(zhong)技(ji)術。主要(yao)由太(tai)陽電(dian)池(chi)板（組件(jian)）、控制(zhi)器和逆(ni)變器三大部分(fen)組成(cheng)，主要(yao)部件(jian)由電(dian)子元器件(jian)構成(cheng)。太(tai)陽能(neng)電(dian)池(chi)經過串聯后進(jin)行封裝(zhuang)保護可(ke)形(xing)成(cheng)大面積(ji)的太(tai)陽電(dian)池(chi)組件(jian)，再配(pei)合上功率控制(zhi)器等部件(jian)就形(xing)成(cheng)了(le)光(guang)伏(fu)發電(dian)裝(zhuang)置。

光伏發電(dian)(dian)(dian)的(de)主要原(yuan)理是半(ban)(ban)導體的(de)光電(dian)(dian)(dian)效應。光子(zi)(zi)(zi)(zi)(zi)(zi)照射(she)到金(jin)屬上(shang)時，它(ta)的(de)能(neng)量可以(yi)被金(jin)屬中某個(ge)電(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)全部吸收，電(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)吸收的(de)能(neng)量足夠大(da)，能(neng)克(ke)服金(jin)屬內(nei)部引力(li)做功，離開金(jin)屬表面逃逸(yi)出來，成(cheng)(cheng)為(wei)光電(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)。硅(gui)原(yuan)子(zi)(zi)(zi)(zi)(zi)(zi)有(you)(you)4個(ge)外(wai)層電(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)，如(ru)果在純硅(gui)中摻入(ru)(ru)有(you)(you)5個(ge)外(wai)層電(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)的(de)原(yuan)子(zi)(zi)(zi)(zi)(zi)(zi)如(ru)磷原(yuan)子(zi)(zi)(zi)(zi)(zi)(zi)，就(jiu)(jiu)成(cheng)(cheng)為(wei)N型(xing)半(ban)(ban)導體；若在純硅(gui)中摻入(ru)(ru)有(you)(you)3個(ge)外(wai)層電(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)的(de)原(yuan)子(zi)(zi)(zi)(zi)(zi)(zi)如(ru)硼(peng)原(yuan)子(zi)(zi)(zi)(zi)(zi)(zi)，形(xing)成(cheng)(cheng)P型(xing)半(ban)(ban)導體。當(dang)(dang)P型(xing)和N型(xing)結(jie)合(he)在一(yi)起時，接觸(chu)面就(jiu)(jiu)會形(xing)成(cheng)(cheng)電(dian)(dian)(dian)勢差，成(cheng)(cheng)為(wei)太(tai)陽能(neng)電(dian)(dian)(dian)池。當(dang)(dang)太(tai)陽光照射(she)到P-N結(jie)后，空穴由P極(ji)區往(wang)N極(ji)區移動(dong)，電(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)由N極(ji)區向P極(ji)區移動(dong)，形(xing)成(cheng)(cheng)電(dian)(dian)(dian)流。

光(guang)(guang)電效應就是光(guang)(guang)照使不均勻半(ban)導體或半(ban)導體與(yu)金屬結合的不同部位(wei)之間(jian)產生電位(wei)差(cha)的現象。它首先(xian)是由光(guang)(guang)子(光(guang)(guang)波)轉(zhuan)化為電子、光(guang)(guang)能(neng)量(liang)轉(zhuan)化為電能(neng)量(liang)的過程；其次，是形成(cheng)電壓過程。

多晶硅經過(guo)鑄(zhu)錠、破錠、切(qie)片等(deng)程序后，制作(zuo)成(cheng)(cheng)待加(jia)工(gong)的硅片。在硅片上(shang)摻雜和擴散微(wei)量的硼、磷等(deng)，就(jiu)(jiu)形成(cheng)(cheng)P－N結(jie)。然后采(cai)用絲(si)網印刷，將精配好(hao)的銀漿(jiang)印在硅片上(shang)做成(cheng)(cheng)柵(zha)線，經過(guo)燒結(jie)，同時(shi)制成(cheng)(cheng)背電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極，并在有柵(zha)線的面涂一層防反射(she)涂層，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)片就(jiu)(jiu)至此(ci)制成(cheng)(cheng)。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)片排列組(zu)(zu)合成(cheng)(cheng)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)件，就(jiu)(jiu)組(zu)(zu)成(cheng)(cheng)了(le)大的電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路板。一般在組(zu)(zu)件四周包鋁框，正面覆(fu)蓋玻璃(li)，反面安(an)裝電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極。有了(le)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)件和其他(ta)輔(fu)助(zhu)設(she)備，就(jiu)(jiu)可(ke)以組(zu)(zu)成(cheng)(cheng)發電(dian)(dian)(dian)(dian)(dian)(dian)(dian)系(xi)統(tong)。為了(le)將直流電(dian)(dian)(dian)(dian)(dian)(dian)(dian)轉(zhuan)化交流電(dian)(dian)(dian)(dian)(dian)(dian)(dian)，需要安(an)裝電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流轉(zhuan)換器。發電(dian)(dian)(dian)(dian)(dian)(dian)(dian)后可(ke)用蓄電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)存(cun)儲，也(ye)可(ke)輸入(ru)公共電(dian)(dian)(dian)(dian)(dian)(dian)(dian)網。發電(dian)(dian)(dian)(dian)(dian)(dian)(dian)系(xi)統(tong)成(cheng)(cheng)本(ben)中(zhong)，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)組(zu)(zu)件約(yue)占50%，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流轉(zhuan)換器、安(an)裝費、其他(ta)輔(fu)助(zhu)部件以及其他(ta)費用占另外50%。

無(wu)論從世(shi)界還是(shi)(shi)從中(zhong)國來看，常規能源(yuan)(yuan)都(dou)是(shi)(shi)很有(you)限的。中(zhong)國的一(yi)次能源(yuan)(yuan)儲(chu)量遠遠低于世(shi)界的平均水平，大(da)約(yue)只有(you)世(shi)界總儲(chu)量的10%。太(tai)陽(yang)能是(shi)(shi)人類(lei)取(qu)之(zhi)不(bu)盡用之(zhi)不(bu)竭的可(ke)再生(sheng)能源(yuan)(yuan)，具(ju)有(you)充分的清(qing)潔性(xing)、絕(jue)對的安全性(xing)、相對的廣泛性(xing)、確實(shi)的長壽命和免維護(hu)性(xing)、資源(yuan)(yuan)的充足性(xing)及潛在的經(jing)濟性(xing)等優(you)點，在能源(yuan)(yuan)戰略中(zhong)具(ju)有(you)重(zhong)要地位(wei)。