一、igbt模塊損壞的原因有哪些

IGBT模塊是能源變換與傳輸的核心器件，在軌道交通、智能電網、航空航天、電動汽車等領域有著廣泛的應用。在使用過程中，IGBT模塊受到容性或感性負載的沖擊，可(ke)能導致(zhi)模(mo)塊損壞(huai)(huai)，一般igbt模(mo)塊損壞(huai)(huai)的原(yuan)因主要有：

1、過電流損壞

（1）鎖定效應

IGBT為復合(he)器件(jian)， 其(qi)內有一(yi)個寄(ji)生(sheng)晶(jing)閘(zha)(zha)管，在規定(ding)的(de)漏極(ji)電流(liu)(liu)范圍內，NPN的(de)正偏(pian)壓不足以使NPN晶(jing)體管導通，當漏極(ji)電流(liu)(liu)大到一(yi)定(ding)程度時， 這個正偏(pian)壓足以使NPN晶(jing)體管開(kai)通，進而使NPN或PNP晶(jing)體管處于飽和狀(zhuang)態，于是(shi)寄(ji)生(sheng)晶(jing)閘(zha)(zha)管開(kai)通，柵極(ji)失(shi)去了控制作用，便發生(sheng)了鎖(suo)定(ding)效(xiao)應(ying)。IGBT發生(sheng)鎖(suo)定(ding)效(xiao)應(ying)后，集電極(ji)電流(liu)(liu)過大，造(zao)成了過高的(de)功耗而導致器件(jian)損壞。

（2）長時間過流運行

IGBT模塊(kuai)長(chang)時間過流運行是指(zhi)IGBT的運行指(zhi)標(biao)達到或(huo)超出RBSOA（反偏安(an)全(quan)工(gong)作區）所限定的電(dian)(dian)流安(an)全(quan)邊界（如(ru)選型失誤、安(an)全(quan)系(xi)數偏小等），出現這(zhe)種情(qing)況時，電(dian)(dian)路必須能在電(dian)(dian)流到達RBSOA限定邊界前(qian)立即關斷器(qi)件，才能達到保(bao)護器(qi)件的目的。

（3）短路超時（>10us）

短路(lu)超(chao)時(shi)是指IGBT所(suo)承(cheng)受(shou)的(de)電(dian)(dian)流值達到或超(chao)出(chu)SCSOA（短路(lu)安全工作區）所(suo)限定的(de)最(zui)大(da)邊(bian)界，比如4-5倍額定電(dian)(dian)流時(shi)，必須在(zai)10us之內(nei)關(guan)斷IGBT。如果此時(shi)IGBT所(suo)承(cheng)受(shou)的(de)最(zui)大(da)電(dian)(dian)壓也超(chao)過(guo)器件標稱(cheng)值，IGBT必須在(zai)更短的(de)時(shi)間內(nei)被關(guan)斷。

2、過電壓損壞和靜電損壞

IGBT在(zai)(zai)關斷(duan)時，由(you)于(yu)逆變電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)中存在(zai)(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)感(gan)成(cheng)分，關斷(duan)瞬(shun)間(jian)產(chan)生尖峰電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)，如果尖峰電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)超過(guo)(guo)IGBT器件的(de)最高峰值電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)，將造(zao)成(cheng)IGBT擊穿損壞(huai)(huai)。IGBT過(guo)(guo) 電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)損壞(huai)(huai)可分為集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)柵極(ji)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)、柵極(ji)-發射極(ji)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)、高du/dt過(guo)(guo)壓(ya)(ya)(ya)(ya)(ya)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)等。大多數過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)保(bao)護的(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)設計都比較(jiao)完善(shan)，但是對于(yu)由(you)高du/dt所(suo)導致的(de)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)故障，基(ji)本上都是采(cai)用(yong)無感(gan)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)容或者RCD結構(gou)吸(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)。由(you)于(yu)吸(xi)收(shou)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)設計的(de)吸(xi)收(shou)容量不夠(gou)而造(zao)成(cheng)IGBT損壞(huai)(huai)，對此可采(cai)用(yong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)鉗位，往(wang)往(wang)在(zai)(zai)集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)-柵極(ji)兩端并接(jie)齊納二(er)極(ji)管(guan)，采(cai)用(yong)柵極(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)動態控制，當集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)瞬(shun)間(jian)超過(guo)(guo)齊納二(er)極(ji)管(guan)的(de)鉗位電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)時，超出的(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)將疊加在(zai)(zai)柵極(ji)上（米勒效(xiao)應起作用(yong)），避免了IGBT因受(shou)集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)發射極(ji)過(guo)(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)而損壞(huai)(huai)。

采用(yong)柵極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)動態控制可以解決過(guo)高的(de)du/dt帶來的(de)集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)發(fa)(fa)射極(ji)(ji)瞬間(jian)(jian)過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)問題，但是它的(de)弊(bi)端是當(dang)IGBT處(chu)于感性負載(zai)運(yun)行時，半(ban)橋結構中處(chu)于關斷的(de)IGBT，由(you)于其(qi)(qi)反并聯(lian)二(er)極(ji)(ji)管（續流(liu)二(er)極(ji)(ji)管）的(de)恢復，其(qi)(qi)集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)發(fa)(fa)射極(ji)(ji)兩端的(de)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)急劇(ju)上升，從(cong)而承受(shou)瞬間(jian)(jian)很高的(de)du/dt。多數情況下，該du/dt值要比(bi)IGBT正常關斷時的(de)集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)發(fa)(fa)射極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)上升率高，由(you)于米勒(le)電(dian)(dian)(dian)(dian)(dian)(dian)容（ Cres）的(de)存在(zai)，該du/dt值將 在(zai)集(ji)電(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)和柵極(ji)(ji)之間(jian)(jian)產生一個 瞬間(jian)(jian)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)，流(liu)向柵極(ji)(ji)驅動電(dian)(dian)(dian)(dian)(dian)(dian)路。該電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)與(yu)柵極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)路的(de)阻抗相互作用(yong)，直接導致柵極(ji)(ji)-發(fa)(fa)射極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)UGE值的(de)升高，甚至超(chao)過(guo)IGBT的(de)開(kai)通門(men)限電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)VGEth值。出現惡劣的(de)情況就是使IGBT被誤觸(chu)發(fa)(fa)導通，導致變(bian)換器的(de)橋臂短路。

3、過熱損壞

過熱(re)損壞一般(ban)指使用中IGBT模塊的(de)(de)結(jie)(jie)溫(wen)正(zheng)超(chao)過晶片的(de)(de)最(zui)大溫(wen)度限(xian)定(ding)，目前應用的(de)(de)IGBT器件還是以(yi)Tjmax=150℃的(de)(de)NPT技術為(wei)主流的(de)(de)，為(wei)此在IGBT模塊應用中其結(jie)(jie)溫(wen)應限(xian)制在該值(zhi)以(yi)下(xia)。

4、G-E間開放狀態下外加主電路電壓

在(zai)門極(ji)一發(fa)射極(ji)問開(kai)(kai) 放的(de)狀(zhuang)態(tai)下外加主(zhu)電路電壓(ya)，會使(shi)IGBT自(zi)動導(dao)通，通過過大的(de)電流(liu)，使(shi)器(qi)件(jian)損(sun)(sun)壞(huai)（這種現象是由(you)于(yu)G-E間在(zai)開(kai)(kai)放狀(zhuang)下，外加主(zhu)電壓(ya)，通過IGBT的(de)反向傳(chuan)輸電容Cres給(gei)門極(ji)-發(fa)射極(ji)間的(de)電毒(du)充電，使(shi)IGBT導(dao)通而產生的(de)）。在(zai)IGBT器(qi)件(jian)試驗(yan)時(shi)(shi)，通過旋(xuan)轉(zhuan)開(kai)(kai)關等機(ji)械(xie)開(kai)(kai)關進行(xing)信號線的(de)切換(huan)，由(you)于(yu)切換(huan)時(shi)(shi)G_E間瞬間變為開(kai)(kai)放狀(zhuang)態(tai)，可(ke)能產生上述現象而損(sun)(sun)壞(huai)IGBT器(qi)件(jian)。另外，在(zai)機(ji)械(xie)開(kai)(kai)關出現振動的(de)情況下，也存在(zai)同樣的(de)時(shi)(shi)間段，可(ke)能損(sun)(sun)壞(huai)元件(jian)。為了防止(zhi)這種損(sun)(sun)壞(huai)，必(bi)須(xu)先將主(zhu)電路（C-E間）的(de)電壓(ya)放電至0V,再進行(xing)門極(ji)信號的(de)切換(huan)。另外，對由(you)多個IGBT器(qi)件(jian)（一組(zu)2個以(yi)上）構成的(de)裝(zhuang)置在(zai)進行(xing)試驗(yan)等特性(xing)試驗(yan)時(shi)(shi)，測試IGBT器(qi)件(jian)以(yi)外的(de)門極(ji)一發(fa)射極(ji)間必(bi)須(xu)予以(yi)短(duan)路。

5、機械應力對產品的破壞

IGBT器件(jian)的(de)端子如(ru)果(guo)(guo)受到(dao)強外力或振動(dong)，就會(hui)產生(sheng)應(ying)(ying)(ying)力，有時(shi)會(hui)導致損壞(huai)IGBT器件(jian)內部電(dian)氣(qi)配線(xian)等(deng)情況。在(zai)將IGBT器件(jian)實際安(an)裝到(dao)裝置上時(shi)，應(ying)(ying)(ying)避免發生(sheng)類似的(de)應(ying)(ying)(ying)力。如(ru)果(guo)(guo)不(bu)固定門(men)極驅(qu)動(dong)用的(de)印刷基板即安(an)裝時(shi)，裝置在(zai)搬運時(shi)由于受到(dao)振動(dong)等(deng)原因，門(men)極驅(qu)動(dong)用的(de)印刷基板也振動(dong)，從而(er)使IGBT器件(jian)的(de)端子發生(sheng)應(ying)(ying)(ying)力，引(yin)起IGBT器件(jian)內部電(dian)氣(qi)配線(xian)的(de)損壞(huai)等(deng)問題。為了防止(zhi)這種不(bu)良情況的(de)發生(sheng)，需要將門(men)極驅(qu)動(dong)用的(de)印刷基板固定。

二、igbt模塊怎么測量好壞

判斷IGBT模塊是否損(sun)壞，一(yi)般(ban)需要先對其進行檢測，igbt模塊的檢測一(yi)般(ban)分為兩部(bu)分：

1、判斷極性

首先將萬(wan)用表(biao)撥在R×1KΩ擋，用萬(wan)用表(biao)測(ce)量(liang)(liang)時，若某一(yi)極(ji)(ji)(ji)(ji)與其它兩(liang)極(ji)(ji)(ji)(ji)阻(zu)值(zhi)(zhi)(zhi)為無(wu)(wu)窮大(da)，調換(huan)表(biao)筆(bi)(bi)后該(gai)極(ji)(ji)(ji)(ji)與其它兩(liang)極(ji)(ji)(ji)(ji)的(de)阻(zu)值(zhi)(zhi)(zhi)仍為無(wu)(wu)窮大(da)，則判斷此極(ji)(ji)(ji)(ji)為柵極(ji)(ji)(ji)(ji)（G），其余兩(liang)極(ji)(ji)(ji)(ji)再用萬(wan)用表(biao)測(ce)量(liang)(liang)，若測(ce)得阻(zu)值(zhi)(zhi)(zhi)為無(wu)(wu)窮大(da)，調換(huan)表(biao)筆(bi)(bi)后測(ce)量(liang)(liang)阻(zu)值(zhi)(zhi)(zhi)較小(xiao)。在測(ce)量(liang)(liang)阻(zu)值(zhi)(zhi)(zhi)較小(xiao)的(de)一(yi)次中，則判斷紅表(biao)筆(bi)(bi)接(jie)的(de)為集電極(ji)(ji)(ji)(ji)（C）；黑表(biao)筆(bi)(bi)接(jie)地為發(fa)射極(ji)(ji)(ji)(ji)（E）。

2、判斷好壞

將(jiang)萬用表(biao)撥在(zai)R×10KΩ擋，用黑表(biao)筆(bi)(bi)接IGBT的(de)集電極(ji)（C），紅表(biao)筆(bi)(bi)接IGBT 的(de)發射(she)極(ji)（E），此(ci)時(shi)(shi)萬用表(biao)的(de)指針在(zai)零位。用手指同時(shi)(shi)觸及一(yi)下(xia)(xia)柵(zha)極(ji)（G）和(he)集電極(ji)（C），這時(shi)(shi)IGBT被觸發導通，萬用表(biao)的(de)指針擺向(xiang)阻值較小的(de)方(fang)向(xiang)，并能站住指示在(zai)某一(yi)位置。然后再用手指同時(shi)(shi)觸及一(yi)下(xia)(xia)柵(zha)極(ji)（G）和(he)發射(she)極(ji)（E），這時(shi)(shi)IGBT被阻斷(duan)，萬用表(biao)的(de)指針回零。此(ci)時(shi)(shi)即可判斷(duan)IGBT是好(hao)的(de)。

三、IGBT模塊檢測注意事項

任何指針式萬(wan)(wan)用表(biao)皆可(ke)用于檢測IGBT。注意判斷IGBT好壞(huai)(huai)時(shi)，一定(ding)要將萬(wan)(wan)用表(biao)撥在R×10KΩ擋，因(yin)R×1KΩ擋以下各檔萬(wan)(wan)用表(biao)內部電(dian)池電(dian)壓太低，檢測好壞(huai)(huai)時(shi)不(bu)能使IGBT導通，而無法判斷IGBT的好壞(huai)(huai)。