一、igbt模塊損壞的原因有哪些

IGBT模塊是能源變換與傳輸的核心器件，在軌道交通、智能電網、航空航天、電動汽車等領域有著廣泛的應用。在使用過程中，IGBT模塊受到容性或感性負載的沖擊，可能導致(zhi)模塊(kuai)損壞，一(yi)般igbt模塊(kuai)損壞的原因主(zhu)要有：

1、過電流損壞

（1）鎖定效應

IGBT為(wei)復合器(qi)件， 其內有一個寄生(sheng)晶(jing)(jing)閘管(guan)，在規(gui)定(ding)的(de)漏(lou)極(ji)(ji)(ji)電流(liu)(liu)范圍(wei)內，NPN的(de)正偏壓不足以使NPN晶(jing)(jing)體管(guan)導通(tong)，當漏(lou)極(ji)(ji)(ji)電流(liu)(liu)大(da)到一定(ding)程(cheng)度時， 這個正偏壓足以使NPN晶(jing)(jing)體管(guan)開通(tong)，進(jin)而使NPN或PNP晶(jing)(jing)體管(guan)處于飽和狀(zhuang)態，于是寄生(sheng)晶(jing)(jing)閘管(guan)開通(tong)，柵極(ji)(ji)(ji)失去了(le)(le)控制作用，便發生(sheng)了(le)(le)鎖(suo)定(ding)效(xiao)(xiao)應(ying)。IGBT發生(sheng)鎖(suo)定(ding)效(xiao)(xiao)應(ying)后，集電極(ji)(ji)(ji)電流(liu)(liu)過大(da)，造成了(le)(le)過高的(de)功耗而導致器(qi)件損壞(huai)。

（2）長時間過流運行

IGBT模塊長時(shi)間過流運行(xing)是指IGBT的(de)(de)運行(xing)指標達到(dao)或超(chao)出(chu)RBSOA（反偏安全工作區）所限定(ding)的(de)(de)電流安全邊(bian)界(jie)（如選型(xing)失誤、安全系數偏小等），出(chu)現這(zhe)種(zhong)情況時(shi)，電路必須能在電流到(dao)達RBSOA限定(ding)邊(bian)界(jie)前立即關(guan)斷器件(jian)，才能達到(dao)保護器件(jian)的(de)(de)目(mu)的(de)(de)。

（3）短路超時（>10us）

短(duan)路(lu)超時(shi)是指(zhi)IGBT所承受的電流(liu)值達到或超出SCSOA（短(duan)路(lu)安全工作區）所限定的最大邊界，比如4-5倍額定電流(liu)時(shi)，必(bi)須在10us之內關斷(duan)IGBT。如果此時(shi)IGBT所承受的最大電壓(ya)也超過器(qi)件標稱(cheng)值，IGBT必(bi)須在更(geng)短(duan)的時(shi)間內被關斷(duan)。

2、過電壓損壞和靜電損壞

IGBT在(zai)(zai)(zai)關斷時，由于逆變電(dian)(dian)(dian)(dian)(dian)路(lu)中存在(zai)(zai)(zai)電(dian)(dian)(dian)(dian)(dian)感成(cheng)(cheng)(cheng)分，關斷瞬(shun)間產生尖峰(feng)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)，如果(guo)尖峰(feng)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)超(chao)過(guo)IGBT器件(jian)的最高峰(feng)值電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)，將造成(cheng)(cheng)(cheng)IGBT擊穿損(sun)壞。IGBT過(guo) 電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)損(sun)壞可分為集(ji)(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)柵極(ji)(ji)過(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)、柵極(ji)(ji)-發射(she)極(ji)(ji)過(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)、高du/dt過(guo)壓(ya)(ya)(ya)電(dian)(dian)(dian)(dian)(dian)等。大多數過(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)保護的電(dian)(dian)(dian)(dian)(dian)路(lu)設計(ji)(ji)都比較完善，但是對于由高du/dt所導致的過(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)故障，基本(ben)上(shang)都是采(cai)用無(wu)感電(dian)(dian)(dian)(dian)(dian)容或者RCD結構(gou)吸收電(dian)(dian)(dian)(dian)(dian)路(lu)。由于吸收電(dian)(dian)(dian)(dian)(dian)路(lu)設計(ji)(ji)的吸收容量不夠而造成(cheng)(cheng)(cheng)IGBT損(sun)壞，對此(ci)可采(cai)用電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)鉗(qian)位(wei)，往往在(zai)(zai)(zai)集(ji)(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)-柵極(ji)(ji)兩端并接齊納二極(ji)(ji)管，采(cai)用柵極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)動態控(kong)制，當集(ji)(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)瞬(shun)間超(chao)過(guo)齊納二極(ji)(ji)管的鉗(qian)位(wei)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)時，超(chao)出的電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)將疊(die)加在(zai)(zai)(zai)柵極(ji)(ji)上(shang)（米勒效應起作用），避免了IGBT因(yin)受集(ji)(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)發射(she)極(ji)(ji)過(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)而損(sun)壞。

采用(yong)(yong)柵(zha)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)壓(ya)動(dong)態控(kong)制可以解決過(guo)高(gao)的(de)(de)(de)(de)(de)du/dt帶來的(de)(de)(de)(de)(de)集(ji)(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)發(fa)(fa)射(she)極(ji)(ji)瞬間過(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)問題，但是它(ta)的(de)(de)(de)(de)(de)弊端(duan)是當IGBT處于感性負載運行(xing)時(shi)，半橋(qiao)結構中處于關斷的(de)(de)(de)(de)(de)IGBT，由于其反并聯(lian)二(er)極(ji)(ji)管(guan)（續流(liu)二(er)極(ji)(ji)管(guan)）的(de)(de)(de)(de)(de)恢復，其集(ji)(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)發(fa)(fa)射(she)極(ji)(ji)兩(liang)端(duan)的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)急劇上升，從而承受瞬間很高(gao)的(de)(de)(de)(de)(de)du/dt。多數情況(kuang)下，該(gai)du/dt值(zhi)要比IGBT正(zheng)常關斷時(shi)的(de)(de)(de)(de)(de)集(ji)(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)發(fa)(fa)射(she)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)壓(ya)上升率高(gao)，由于米勒(le)電(dian)(dian)(dian)(dian)(dian)容（ Cres）的(de)(de)(de)(de)(de)存(cun)在(zai)，該(gai)du/dt值(zhi)將 在(zai)集(ji)(ji)電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)和柵(zha)極(ji)(ji)之(zhi)間產(chan)生(sheng)一(yi)個 瞬間電(dian)(dian)(dian)(dian)(dian)流(liu)，流(liu)向柵(zha)極(ji)(ji)驅動(dong)電(dian)(dian)(dian)(dian)(dian)路。該(gai)電(dian)(dian)(dian)(dian)(dian)流(liu)與(yu)柵(zha)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)路的(de)(de)(de)(de)(de)阻抗相互(hu)作用(yong)(yong)，直接導致柵(zha)極(ji)(ji)-發(fa)(fa)射(she)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)壓(ya)UGE值(zhi)的(de)(de)(de)(de)(de)升高(gao)，甚至超過(guo)IGBT的(de)(de)(de)(de)(de)開通門限電(dian)(dian)(dian)(dian)(dian)壓(ya)VGEth值(zhi)。出(chu)現惡劣的(de)(de)(de)(de)(de)情況(kuang)就是使(shi)IGBT被(bei)誤觸發(fa)(fa)導通，導致變換器的(de)(de)(de)(de)(de)橋(qiao)臂短路。

3、過熱損壞

過熱(re)損(sun)壞一般指使用中IGBT模塊的結溫正超(chao)過晶片的最大(da)溫度限(xian)定，目(mu)前(qian)應用的IGBT器件還是以(yi)Tjmax=150℃的NPT技術為主流的，為此在IGBT模塊應用中其結溫應限(xian)制在該值以(yi)下。

4、G-E間開放狀態下外加主電路電壓

在(zai)(zai)門(men)極(ji)一發(fa)射(she)極(ji)問開 放的(de)(de)(de)(de)狀(zhuang)態下(xia)(xia)外加主電(dian)(dian)(dian)(dian)路(lu)電(dian)(dian)(dian)(dian)壓，會使IGBT自動導通(tong)，通(tong)過過大的(de)(de)(de)(de)電(dian)(dian)(dian)(dian)流，使器件(jian)(jian)損(sun)壞(huai)（這種(zhong)現象是由(you)于(yu)G-E間(jian)在(zai)(zai)開放狀(zhuang)下(xia)(xia)，外加主電(dian)(dian)(dian)(dian)壓，通(tong)過IGBT的(de)(de)(de)(de)反向傳輸(shu)電(dian)(dian)(dian)(dian)容Cres給門(men)極(ji)-發(fa)射(she)極(ji)間(jian)的(de)(de)(de)(de)電(dian)(dian)(dian)(dian)毒充電(dian)(dian)(dian)(dian)，使IGBT導通(tong)而產生的(de)(de)(de)(de)）。在(zai)(zai)IGBT器件(jian)(jian)試驗(yan)時(shi)，通(tong)過旋(xuan)轉開關等機(ji)械開關進行(xing)信號線的(de)(de)(de)(de)切換，由(you)于(yu)切換時(shi)G_E間(jian)瞬間(jian)變(bian)為(wei)開放狀(zhuang)態，可能產生上述現象而損(sun)壞(huai)IGBT器件(jian)(jian)。另(ling)外，在(zai)(zai)機(ji)械開關出現振動的(de)(de)(de)(de)情況(kuang)下(xia)(xia)，也存在(zai)(zai)同樣的(de)(de)(de)(de)時(shi)間(jian)段(duan)，可能損(sun)壞(huai)元(yuan)件(jian)(jian)。為(wei)了防(fang)止這種(zhong)損(sun)壞(huai)，必(bi)須先將主電(dian)(dian)(dian)(dian)路(lu)（C-E間(jian)）的(de)(de)(de)(de)電(dian)(dian)(dian)(dian)壓放電(dian)(dian)(dian)(dian)至0V,再進行(xing)門(men)極(ji)信號的(de)(de)(de)(de)切換。另(ling)外，對由(you)多個(ge)IGBT器件(jian)(jian)（一組2個(ge)以(yi)上）構成的(de)(de)(de)(de)裝置在(zai)(zai)進行(xing)試驗(yan)等特性試驗(yan)時(shi)，測試IGBT器件(jian)(jian)以(yi)外的(de)(de)(de)(de)門(men)極(ji)一發(fa)射(she)極(ji)間(jian)必(bi)須予以(yi)短路(lu)。

5、機械應力對產品的破壞

IGBT器(qi)件(jian)的(de)(de)端子(zi)如果受(shou)到(dao)強外(wai)力(li)或振(zhen)動(dong)，就(jiu)會產生(sheng)應(ying)(ying)力(li)，有時(shi)(shi)會導致損壞(huai)(huai)IGBT器(qi)件(jian)內部電氣配(pei)(pei)線(xian)等情況(kuang)。在(zai)將IGBT器(qi)件(jian)實際安(an)裝到(dao)裝置(zhi)上時(shi)(shi)，應(ying)(ying)避(bi)免發(fa)生(sheng)類(lei)似的(de)(de)應(ying)(ying)力(li)。如果不固定(ding)門(men)極驅動(dong)用(yong)的(de)(de)印刷基板(ban)(ban)即安(an)裝時(shi)(shi)，裝置(zhi)在(zai)搬運時(shi)(shi)由于(yu)受(shou)到(dao)振(zhen)動(dong)等原因，門(men)極驅動(dong)用(yong)的(de)(de)印刷基板(ban)(ban)也振(zhen)動(dong)，從而使IGBT器(qi)件(jian)的(de)(de)端子(zi)發(fa)生(sheng)應(ying)(ying)力(li)，引起(qi)IGBT器(qi)件(jian)內部電氣配(pei)(pei)線(xian)的(de)(de)損壞(huai)(huai)等問題。為了防止這種不良情況(kuang)的(de)(de)發(fa)生(sheng)，需要將門(men)極驅動(dong)用(yong)的(de)(de)印刷基板(ban)(ban)固定(ding)。

二、igbt模塊怎么測量好壞

判(pan)斷(duan)IGBT模(mo)塊是(shi)否損壞，一般需要先對其進行檢測(ce)，igbt模(mo)塊的檢測(ce)一般分(fen)為兩部分(fen)：

1、判斷極性

首先將萬用(yong)表(biao)(biao)(biao)(biao)撥在(zai)R×1KΩ擋，用(yong)萬用(yong)表(biao)(biao)(biao)(biao)測(ce)量(liang)時，若某一(yi)極(ji)(ji)(ji)與其(qi)它(ta)兩(liang)極(ji)(ji)(ji)阻值為(wei)(wei)無窮(qiong)(qiong)大(da)，調(diao)換表(biao)(biao)(biao)(biao)筆(bi)(bi)后該(gai)極(ji)(ji)(ji)與其(qi)它(ta)兩(liang)極(ji)(ji)(ji)的阻值仍為(wei)(wei)無窮(qiong)(qiong)大(da)，則(ze)判斷此(ci)極(ji)(ji)(ji)為(wei)(wei)柵極(ji)(ji)(ji)（G），其(qi)余(yu)兩(liang)極(ji)(ji)(ji)再(zai)用(yong)萬用(yong)表(biao)(biao)(biao)(biao)測(ce)量(liang)，若測(ce)得阻值為(wei)(wei)無窮(qiong)(qiong)大(da)，調(diao)換表(biao)(biao)(biao)(biao)筆(bi)(bi)后測(ce)量(liang)阻值較(jiao)小(xiao)。在(zai)測(ce)量(liang)阻值較(jiao)小(xiao)的一(yi)次中，則(ze)判斷紅表(biao)(biao)(biao)(biao)筆(bi)(bi)接(jie)(jie)的為(wei)(wei)集電極(ji)(ji)(ji)（C）；黑表(biao)(biao)(biao)(biao)筆(bi)(bi)接(jie)(jie)地為(wei)(wei)發射極(ji)(ji)(ji)（E）。

2、判斷好壞

將(jiang)萬(wan)(wan)用(yong)(yong)表(biao)(biao)撥在(zai)R×10KΩ擋，用(yong)(yong)黑表(biao)(biao)筆接IGBT的(de)(de)(de)集(ji)電極（C），紅表(biao)(biao)筆接IGBT 的(de)(de)(de)發(fa)射極（E），此時(shi)萬(wan)(wan)用(yong)(yong)表(biao)(biao)的(de)(de)(de)指針在(zai)零位(wei)。用(yong)(yong)手指同時(shi)觸(chu)(chu)及一(yi)下(xia)柵極（G）和(he)集(ji)電極（C），這時(shi)IGBT被觸(chu)(chu)發(fa)導通，萬(wan)(wan)用(yong)(yong)表(biao)(biao)的(de)(de)(de)指針擺向(xiang)(xiang)阻值較小的(de)(de)(de)方(fang)向(xiang)(xiang)，并能站住指示在(zai)某一(yi)位(wei)置。然后再用(yong)(yong)手指同時(shi)觸(chu)(chu)及一(yi)下(xia)柵極（G）和(he)發(fa)射極（E），這時(shi)IGBT被阻斷，萬(wan)(wan)用(yong)(yong)表(biao)(biao)的(de)(de)(de)指針回零。此時(shi)即可判斷IGBT是好的(de)(de)(de)。

三、IGBT模塊檢測注意事項

任何(he)指(zhi)針式萬(wan)用(yong)(yong)表皆(jie)可用(yong)(yong)于檢測IGBT。注意判(pan)(pan)斷IGBT好(hao)壞時，一(yi)定要(yao)將萬(wan)用(yong)(yong)表撥(bo)在R×10KΩ擋，因R×1KΩ擋以下各檔萬(wan)用(yong)(yong)表內部電池(chi)電壓(ya)太低，檢測好(hao)壞時不(bu)能(neng)使IGBT導(dao)通，而無法判(pan)(pan)斷IGBT的好(hao)壞。